首页> 外文OA文献 >The Effects of Post-Thermal Annealing on the Emission Spectra of GaAs/AlGaAs Quantum Dots grown by Droplet Epitaxy

【2h】

The Effects of Post-Thermal Annealing on the Emission Spectra of GaAs/AlGaAs Quantum Dots grown by Droplet Epitaxy

机译：后热退火对碳纳米管发射光谱的影响由Droplet Epitaxy生长的Gaas / alGaas量子点

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

摘要
著录项
相似文献
相关主题

摘要

We fabricated GaAs/AlGaAs quantum dots by droplet epitaxy method, andobtained the geometries of the dots from scanning transmission electronmicroscopy data. Post-thermal annealing is essential for the optical activationof quantum dots grown by droplet epitaxy. We investigated the emission energyshifts of the dots and underlying superlattice by post-thermal annealing withphotoluminescence and cathodoluminescence measurements, and specified theemissions from the dots by selectively etching the structure down to a lowerlayer of quantum dots. We studied the influences of the degree of annealing onthe optical properties of the dots from the peak shifts of the superlattice,which has the same composition as the dots, since the superlattice has uniformand well-defined geometry. Theoretical analysis provided the diffusion lengthdependence of the peak shifts of the emission spectra.

机译：通过液滴外延法制备了GaAs / AlGaAs量子点，并通过扫描透射电镜数据获得了点的几何形状。后热退火对于通过液滴外延生长的量子点的光学激活至关重要。我们通过采用光致发光和阴极发光测量的后热退火研究了点和下方超晶格的发射能位移，并通过选择性地向下蚀刻量子点的下层结构来指定从点的发射。我们从超晶格的峰位移研究了退火程度对点的光学性能的影响，超晶格具有与点相同的组成，因为超晶格具有均匀且定义明确的几何形状。理论分析提供了发射光谱的峰位移的扩散长度依赖性。

著录项

作者
Moon, Pilkyung; Lee, J. D.; Ha, S. K.; Lee, E. H.; Choi, W. J.; Song, J. D.; Kim, J. S.; Dang, L. S.;
展开▼
作者单位

展开▼
年度 2012
总页数
原文格式 PDF
正文语种 {"code":"en","name":"English","id":9}
中图分类

相似文献

外文文献
中文文献
专利

1. Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy [J] . Mantovani V, Sanguinetti S, Guzzi M, Physica, E. Low-dimensional systems & nanostructures . 2004,第3a4期

机译：修饰液滴外延生长的低密度GaAs / AlGaAs量子点的生长后退火和Ga覆盖效应的研究
2. Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxy [J] . S. Adorno, S. Bietti, S. Sanguinetti Journal of Crystal Growth . 2013,第sepa1期

机译：液滴外延生长的GaAs / AlGaAs量子点中的退火诱导各向异性
3. Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxy [J] . S. Bietti, L. Cavigli, S. Minari, Journal of Crystal Growth . 2013,第sepa1期

机译：砷压力对液滴外延生长在硅上的GaAs / AlGaAs量子点质量的影响
4. Theoretical And Experimental Studies Of The Effects Of Rapid Thermal Annealing In GaAs/AlGaAs Quantum Dots Grown By Droplet Epitaxy [C] . P. Moon, S.-K. Ha, J. D. Song, International Conference on the Physics of Semiconductors . 2011

机译：快速热退火在液滴外延生长的GaAs / Algaas量子点中快速热退火效果的理论与实验研究
5. Alternating molecular beam epitaxy and characterization of InGaAs quantum dots and quantum dot lasers. [D] . Mirin, Richard Paul. 1996

机译：InGaAs量子点和量子点激光器的交替分子束外延和表征。
6. Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature [O] . Mohamed Benyoucef, Verena Zuerbig, Johann Peter Reithmaier, 2012

机译：高衬底温度下通过液滴外延生长的单个InGaAs / GaAs量子点的单光子发射
7. Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate [O] . Keizer, JG Joris, Jo, M, Mano, T, 2011

机译：GaAs / AlGaAs量子线和液滴外延在（311）A衬底上生长的量子点的结构原子尺度分析

The Effects of Post-Thermal Annealing on the Emission Spectra of GaAs/AlGaAs Quantum Dots grown by Droplet Epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅